Vds

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网络  漏源电压; 漏-源电压; 源漏电压; 车辆可靠性调研; 电压

双语例句

• VDS was an independent correlation factor of MACE during hospitalization.
  VDS是住院期间心脏不良事件发生的独立相关因素。
• These are COM interfaces are part to the Virtual Disk Service, the underlying API Windows uses for most volume and disk management features.
  这个COM接口属于虚拟磁盘服务（VirtualDiskService）的一部分，VDS是Windows大量用在卷和磁盘管理特性的底层API。
• Method 71 cases of patients with malignancy were treated by NVB or VDS, the reaction such as gastric and intestinal reaction, marrow restrain, never acroteric Damage, skin vein damage were observed and compared.
  方法对71例恶性肿瘤患者应用NVB或VDS出现的胃肠道反应，骨髓抑制，神经末梢损伤、皮肤静脉损伤进行对照观察。
• The drain current-voltage relations have been derived from two region model.
  由二区间模型导出了IDS与VGS和VDS的关系。
• Otherwise, as a research tool, VDS can be also used in the study of vehicle's performance, the analysis of driving behavior, driving action and response in danger, reappearance analysis of traffic accident, evaluation of vehicle electric production and evaluation of transport environment.
  作为一种研究工具，驾驶模拟器还被运用于汽车性能研究、驾驶行为分析、危险环境驾驶及反应测试、交通事故再现分析、汽车电子产品的评价、交通环境评价等诸多研究领域。
• On the basis of conventional composite snubber circuit, CPRS is constituted by adding a diode VDs, a parallel discharge circuit ( Rd// Cs) and a winding Na. Thereinto, winding Na is an additional wind-ing coupled with high frequency transformer.
  在通常的复合缓冲电路基础上，附加一个二极管VDs、一个并联放电馈能电路（Rd//Cs）和一个附加在高频变压器上的耦合绕组Na构成CPRS网络。
• A Research of Backup Method Based on Virtual Disk Service and Volume Shadow Copy Service
  一种基于VDS和VSS的备份方法研究
• DS's empowerment system has taken many months to develop resulting in a low hierarchy structure throughout their organisation which means they expect their employees to make decisions for themselves.
  VDS的授权体制经历了几个月的时间才在全公司形成一套结构，并没有严格的等级限制，这也意味着各位员工可以自己做出决策。
• Objective To observe the kill effect of hyperthermia combined with anti-cancer drugs ( mitomycin, vindesine, cisplatin) on human lung adenocarcinoma cell lines ( D6).
  目的观察高温和丝裂霉素（MMC）、长春酰胺（VDS）及顺铂（DDP）联合应用对人肺腺癌细胞的杀伤作用。
• The relationship between gate-drain capacitance ( C_ gd) of SOI LDMOS and gate-source voltage ( V_ gs) and drain-source voltage ( V_ ds) is investigated.
  借助软件，模拟并研究了SOILDMOS栅漏电容Cgd与栅源电压Vgs和漏源电压Vds的关系；